Germanium silicon : (Record no. 526899)

MARC details
000 -LEADER
fixed length control field 05947cam a2200625Ia 4500
001 - CONTROL NUMBER
control field ocn289424632
003 - CONTROL NUMBER IDENTIFIER
control field OCoLC
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20180529114255.0
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 081222s1999 caua ob 001 0 eng d
019 ## -
-- 646756700
-- 808732822
-- 931604590
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9780080864549
Qualifying information (electronic bk.)
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 0080864546
Qualifying information (electronic bk.)
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 012752164X
Qualifying information (electronic bk.)
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9780127521640
Qualifying information (electronic bk.)
035 ## - SYSTEM CONTROL NUMBER
System control number (OCoLC)289424632
040 ## - CATALOGING SOURCE
Original cataloging agency DLC
Language of cataloging eng
Transcribing agency DLC
Modifying agency AU
049 ## - LOCAL HOLDINGS (OCLC)
Holding library Alfaisal Main Library
050 #4 - LIBRARY OF CONGRESS CALL NUMBER
Classification number QC610.9
Item number .S48eb vol. 56
245 00 - TITLE STATEMENT
Title Germanium silicon :
Remainder of title physics and materials /
Statement of responsibility, etc volume editors, Robert Hull, John C. Bean.
260 ## - PUBLICATION, DISTRIBUTION, ETC. (IMPRINT)
Place of publication, distribution, etc San Diego :
Name of publisher, distributor, etc Academic Press,
Date of publication, distribution, etc ©1999.
264 ## - PRODUCTION, PUBLICATION, DISTRIBUTION, MANUFACTURE STATEMENTS
Date of production, publication, distribution, manufacture ©1999.
300 ## - PHYSICAL DESCRIPTION
Extent 1 online resource (xi, 444 pages) :
Other physical details illustrations.
336 ## - CONTENT TYPE
Content Type Term text
Content Type Code txt
Source rdacontent
337 ## - MEDIA TYPE
Media Type Term computer
Media Type Code c
Source rdamedia
338 ## - CARRIER TYPE
Carrier Type Term online resource
Carrier Type Code cr
Source rdacarrier
490 1# - SERIES STATEMENT
Series statement Semiconductors and semimetals ;
Volume number/sequential designation v. 56
504 ## - BIBLIOGRAPHY, ETC. NOTE
Bibliography, etc Includes bibliographical references and index.
588 0# -
-- Print version record.
520 ## - SUMMARY, ETC.
Summary, etc Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.
505 0# - FORMATTED CONTENTS NOTE
Formatted contents note Front Cover; Germanium Silicon: Physics and Materials; Copyright Page; Contents; List of Contributors; Chapter 1. Growth Techniques and Procedures; I. Introduction; II. Generic lssues; III. Common Growth Techniques; IV. Comparison of Growth Results; V. Nonplanar Growth; VI. Summary; Chapter 2. Fundamental Mechanisms of Film Growth; I. Introduction; II. Silicon; III. Heteroepitaxial Growth: Ge on Si; IV. SiGe Alloy Films; V. Summary; References; Chapter 3. Misfit Strain and Accommodation in SiGe Heterostructures; I. Origin of Strain in Heteroepitaxy; II. Accommodation of Strain.
505 8# - FORMATTED CONTENTS NOTE
Formatted contents note III. Review of Basic Dislocation TheoryIV. Excess Stress, Equilibrium Strain and Critical Thickness; V. Metastability and Misfit Dislocation Kinetics; VI. Misfit and Threading Dislocation Reduction Techniques; VII. Conclusions; References; Chapter 4. Fundamental Physics of Strained Layer GeSi: Quo Vadis?; I. Introduction; II. Perfect Superlattice Systems; III. Electronic Structure of Imperfect and Finite Systems; IV. Luminescence and Interface Localization; V. Microscopic Signature of GeSi Interfaces; VI. Microscopic Electronic Structure Effects in Optical Spectra; VII. Conclusion; References.
505 8# - FORMATTED CONTENTS NOTE
Formatted contents note Chapter 5. Optical PropertiesI. Introduction; II. Forms of Differential Spectroscopy Based on Reflection or Absorption of Light; III. Raman Scattering; IV. Photoluminescence; V. Concluding Remarks; References; Chapter 6. Electronic Properties and Deep Levels in Germanium-Silicon; I. Introduction; II. Deep Levels in GexSi1-x; III. Influence of Defects on Electrical Properties of GexSi1-x, Alloys; IV. Camer Transport Properties of GexSi1-x; V. Conclusions; References; Chapter 7. Optoelectronics in Silicon and Germanium Silicon; I. Introduction; II. Photodetectors; III. Light Emitters.
505 8# - FORMATTED CONTENTS NOTE
Formatted contents note IV. Guided-Wave DevicesV. Conclusions; References; Chapter 8. Si1-y, Cy, and Si1-x-yGexCy Alloy Layers; I. Introduction; II. General Remarks on the Material Combination of Si, Ge and C; III. Preparation of Si1-yCy and Si1-x-yGexCy Layers by Molecular Beam Epitaxy; IV. Structural Properties; V. Optical Properties; VI. Electrical Transport Properties; VII. Summary/Devices; References; Index; Contents of Volumes in This Series.
506 ## - RESTRICTIONS ON ACCESS NOTE
Terms governing access Owing to Legal Deposit regulations this resource may only be accessed from within National Library of Scotland. For more information contact enquiries@nls.uk.
Institution to which field applies StEdNL
590 ## - LOCAL NOTE (RLIN)
Local note Elsevier
Provenance (VM) [OBSOLETE] ScienceDirect All Books
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Semiconductors.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Silicon.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Germanium.
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element TECHNOLOGY & ENGINEERING
General subdivision Electronics
-- Solid State.
Source of heading or term bisacsh
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element TECHNOLOGY & ENGINEERING
General subdivision Electronics
-- Semiconductors.
Source of heading or term bisacsh
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Germanium.
Source of heading or term fast
-- (OCoLC)fst00942078
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Semiconductors.
Source of heading or term fast
-- (OCoLC)fst01112198
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Silicon.
Source of heading or term fast
-- (OCoLC)fst01118631
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Semiconducteurs.
Source of heading or term ram
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Semi-métaux.
Source of heading or term ram
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Silicium.
Source of heading or term ram
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Germanium.
Source of heading or term ram
655 #7 - INDEX TERM--GENRE/FORM
Genre/form data or focus term Electronic books.
Source of term local
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Hull, Robert,
Dates associated with a name 1959-
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Bean, John C.
Fuller form of name (John Condon),
Dates associated with a name 1950-
710 2# - ADDED ENTRY--CORPORATE NAME
Corporate name or jurisdiction name as entry element ScienceDirect eBooks.
776 08 - ADDITIONAL PHYSICAL FORM ENTRY
Display text Print version:
Title Germanium silicon.
Place, publisher, and date of publication San Diego : Academic Press, ©1999
International Standard Book Number 012752164X
-- 9780127521640
Record control number (OCoLC)40391761
830 #0 - SERIES ADDED ENTRY--UNIFORM TITLE
Uniform title Semiconductors and semimetals ;
Volume number/sequential designation v. 56.
856 40 - ELECTRONIC LOCATION AND ACCESS
Uniform Resource Identifier <a href="http://ezproxy.alfaisal.edu/login?url=https://www.sciencedirect.com/science/bookseries/00808784/56">http://ezproxy.alfaisal.edu/login?url=https://www.sciencedirect.com/science/bookseries/00808784/56</a>
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Source of classification or shelving scheme Library of Congress Classification
Koha item type eBooks

No items available.

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