Germanium silicon : (Record no. 526899)
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000 -LEADER | |
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fixed length control field | 05947cam a2200625Ia 4500 |
001 - CONTROL NUMBER | |
control field | ocn289424632 |
003 - CONTROL NUMBER IDENTIFIER | |
control field | OCoLC |
005 - DATE AND TIME OF LATEST TRANSACTION | |
control field | 20180529114255.0 |
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION | |
fixed length control field | 081222s1999 caua ob 001 0 eng d |
019 ## - | |
-- | 646756700 |
-- | 808732822 |
-- | 931604590 |
020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
International Standard Book Number | 9780080864549 |
Qualifying information | (electronic bk.) |
020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
International Standard Book Number | 0080864546 |
Qualifying information | (electronic bk.) |
020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
International Standard Book Number | 012752164X |
Qualifying information | (electronic bk.) |
020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
International Standard Book Number | 9780127521640 |
Qualifying information | (electronic bk.) |
035 ## - SYSTEM CONTROL NUMBER | |
System control number | (OCoLC)289424632 |
040 ## - CATALOGING SOURCE | |
Original cataloging agency | DLC |
Language of cataloging | eng |
Transcribing agency | DLC |
Modifying agency | AU |
049 ## - LOCAL HOLDINGS (OCLC) | |
Holding library | Alfaisal Main Library |
050 #4 - LIBRARY OF CONGRESS CALL NUMBER | |
Classification number | QC610.9 |
Item number | .S48eb vol. 56 |
245 00 - TITLE STATEMENT | |
Title | Germanium silicon : |
Remainder of title | physics and materials / |
Statement of responsibility, etc | volume editors, Robert Hull, John C. Bean. |
260 ## - PUBLICATION, DISTRIBUTION, ETC. (IMPRINT) | |
Place of publication, distribution, etc | San Diego : |
Name of publisher, distributor, etc | Academic Press, |
Date of publication, distribution, etc | ©1999. |
264 ## - PRODUCTION, PUBLICATION, DISTRIBUTION, MANUFACTURE STATEMENTS | |
Date of production, publication, distribution, manufacture | ©1999. |
300 ## - PHYSICAL DESCRIPTION | |
Extent | 1 online resource (xi, 444 pages) : |
Other physical details | illustrations. |
336 ## - CONTENT TYPE | |
Content Type Term | text |
Content Type Code | txt |
Source | rdacontent |
337 ## - MEDIA TYPE | |
Media Type Term | computer |
Media Type Code | c |
Source | rdamedia |
338 ## - CARRIER TYPE | |
Carrier Type Term | online resource |
Carrier Type Code | cr |
Source | rdacarrier |
490 1# - SERIES STATEMENT | |
Series statement | Semiconductors and semimetals ; |
Volume number/sequential designation | v. 56 |
504 ## - BIBLIOGRAPHY, ETC. NOTE | |
Bibliography, etc | Includes bibliographical references and index. |
588 0# - | |
-- | Print version record. |
520 ## - SUMMARY, ETC. | |
Summary, etc | Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry. |
505 0# - FORMATTED CONTENTS NOTE | |
Formatted contents note | Front Cover; Germanium Silicon: Physics and Materials; Copyright Page; Contents; List of Contributors; Chapter 1. Growth Techniques and Procedures; I. Introduction; II. Generic lssues; III. Common Growth Techniques; IV. Comparison of Growth Results; V. Nonplanar Growth; VI. Summary; Chapter 2. Fundamental Mechanisms of Film Growth; I. Introduction; II. Silicon; III. Heteroepitaxial Growth: Ge on Si; IV. SiGe Alloy Films; V. Summary; References; Chapter 3. Misfit Strain and Accommodation in SiGe Heterostructures; I. Origin of Strain in Heteroepitaxy; II. Accommodation of Strain. |
505 8# - FORMATTED CONTENTS NOTE | |
Formatted contents note | III. Review of Basic Dislocation TheoryIV. Excess Stress, Equilibrium Strain and Critical Thickness; V. Metastability and Misfit Dislocation Kinetics; VI. Misfit and Threading Dislocation Reduction Techniques; VII. Conclusions; References; Chapter 4. Fundamental Physics of Strained Layer GeSi: Quo Vadis?; I. Introduction; II. Perfect Superlattice Systems; III. Electronic Structure of Imperfect and Finite Systems; IV. Luminescence and Interface Localization; V. Microscopic Signature of GeSi Interfaces; VI. Microscopic Electronic Structure Effects in Optical Spectra; VII. Conclusion; References. |
505 8# - FORMATTED CONTENTS NOTE | |
Formatted contents note | Chapter 5. Optical PropertiesI. Introduction; II. Forms of Differential Spectroscopy Based on Reflection or Absorption of Light; III. Raman Scattering; IV. Photoluminescence; V. Concluding Remarks; References; Chapter 6. Electronic Properties and Deep Levels in Germanium-Silicon; I. Introduction; II. Deep Levels in GexSi1-x; III. Influence of Defects on Electrical Properties of GexSi1-x, Alloys; IV. Camer Transport Properties of GexSi1-x; V. Conclusions; References; Chapter 7. Optoelectronics in Silicon and Germanium Silicon; I. Introduction; II. Photodetectors; III. Light Emitters. |
505 8# - FORMATTED CONTENTS NOTE | |
Formatted contents note | IV. Guided-Wave DevicesV. Conclusions; References; Chapter 8. Si1-y, Cy, and Si1-x-yGexCy Alloy Layers; I. Introduction; II. General Remarks on the Material Combination of Si, Ge and C; III. Preparation of Si1-yCy and Si1-x-yGexCy Layers by Molecular Beam Epitaxy; IV. Structural Properties; V. Optical Properties; VI. Electrical Transport Properties; VII. Summary/Devices; References; Index; Contents of Volumes in This Series. |
506 ## - RESTRICTIONS ON ACCESS NOTE | |
Terms governing access | Owing to Legal Deposit regulations this resource may only be accessed from within National Library of Scotland. For more information contact enquiries@nls.uk. |
Institution to which field applies | StEdNL |
590 ## - LOCAL NOTE (RLIN) | |
Local note | Elsevier |
Provenance (VM) [OBSOLETE] | ScienceDirect All Books |
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM | |
Topical term or geographic name as entry element | Semiconductors. |
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM | |
Topical term or geographic name as entry element | Silicon. |
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM | |
Topical term or geographic name as entry element | Germanium. |
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM | |
Topical term or geographic name as entry element | TECHNOLOGY & ENGINEERING |
General subdivision | Electronics |
-- | Solid State. |
Source of heading or term | bisacsh |
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM | |
Topical term or geographic name as entry element | TECHNOLOGY & ENGINEERING |
General subdivision | Electronics |
-- | Semiconductors. |
Source of heading or term | bisacsh |
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM | |
Topical term or geographic name as entry element | Germanium. |
Source of heading or term | fast |
-- | (OCoLC)fst00942078 |
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM | |
Topical term or geographic name as entry element | Semiconductors. |
Source of heading or term | fast |
-- | (OCoLC)fst01112198 |
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM | |
Topical term or geographic name as entry element | Silicon. |
Source of heading or term | fast |
-- | (OCoLC)fst01118631 |
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM | |
Topical term or geographic name as entry element | Semiconducteurs. |
Source of heading or term | ram |
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM | |
Topical term or geographic name as entry element | Semi-métaux. |
Source of heading or term | ram |
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM | |
Topical term or geographic name as entry element | Silicium. |
Source of heading or term | ram |
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM | |
Topical term or geographic name as entry element | Germanium. |
Source of heading or term | ram |
655 #7 - INDEX TERM--GENRE/FORM | |
Genre/form data or focus term | Electronic books. |
Source of term | local |
700 1# - ADDED ENTRY--PERSONAL NAME | |
Personal name | Hull, Robert, |
Dates associated with a name | 1959- |
700 1# - ADDED ENTRY--PERSONAL NAME | |
Personal name | Bean, John C. |
Fuller form of name | (John Condon), |
Dates associated with a name | 1950- |
710 2# - ADDED ENTRY--CORPORATE NAME | |
Corporate name or jurisdiction name as entry element | ScienceDirect eBooks. |
776 08 - ADDITIONAL PHYSICAL FORM ENTRY | |
Display text | Print version: |
Title | Germanium silicon. |
Place, publisher, and date of publication | San Diego : Academic Press, ©1999 |
International Standard Book Number | 012752164X |
-- | 9780127521640 |
Record control number | (OCoLC)40391761 |
830 #0 - SERIES ADDED ENTRY--UNIFORM TITLE | |
Uniform title | Semiconductors and semimetals ; |
Volume number/sequential designation | v. 56. |
856 40 - ELECTRONIC LOCATION AND ACCESS | |
Uniform Resource Identifier | <a href="http://ezproxy.alfaisal.edu/login?url=https://www.sciencedirect.com/science/bookseries/00808784/56">http://ezproxy.alfaisal.edu/login?url=https://www.sciencedirect.com/science/bookseries/00808784/56</a> |
942 ## - ADDED ENTRY ELEMENTS (KOHA) | |
Source of classification or shelving scheme | Library of Congress Classification |
Koha item type | eBooks |
No items available.