Plasma etching processes for interconnect realization in VLSI / edited by Nicolas Posseme.
Publisher: London : ISTE Press ; Oxford : Elsevier Ltd, 2015Description: 1 online resourceContent type:- text
- computer
- online resource
- 9780081005903
- 0081005903
- TK7874.75
eBooks
Includes bibliographical references and index.
Vendor-supplied metadata.
This is the first of two books presenting the challenges and future prospects of plasma etching processes for microelectronics, reviewing the past, present and future issues of etching processes in order to improve the understanding of these issues through innovative solutions.
Front Cover ; Plasma Etching Processes for Interconnect Realization in VLSI; Copyright ; Contents ; List of Acronyms ; Preface ; Chapter 1: Introduction ; 1.1. Integration Processes Related to Copper Introduction ; 1.2. Dielectric Material with Low-k Value (<4) ; Chapter 2: Interaction Plasma/Dielectric; 2.1. Porous SiOCH Film Etching; 2.2. Porous SiOCH Film Sensitivity to Post-Etch Treatments ; Chapter 3: Porous SiOCH Film Integration; 3.1. Trench First Metallic Hard Mask Integration ; 3.2. Porous SiOCH Integration Using the Via First Approach ; 3.3. Summary.
Chapter 4: Interconnects for Tomorrow 4.1. Consequence of Porosity Increase ; 4.2. Process Solutions for Dielectric Constant Reduction ; 4.3. Material Solutions for Dielectric Constant Reduction ; 4.4. Alternative Interconnect Architectures for Dielectric Constant Reduction ; 4.5. Conclusion ; Bibliography ; List of Authors ; Index.
Elsevier ScienceDirect All Books