Charge and Spin Transport in Disordered Graphene-Based Materials [electronic resource] /
by Dinh Van Tuan.
- 1st ed. 2016.
- XVI, 153 p. 68 illus., 53 illus. in color. online resource.
- Springer Theses, Recognizing Outstanding Ph.D. Research, 2190-5053 .
- Springer Theses, Recognizing Outstanding Ph.D. Research, .
Introduction -- Electronic and Transport Properties of Graphene -- The Real Space Order O(N) Transport Formalism -- Transport in Disordered Graphene -- Spin Transport in Disordered Graphene -- Conclusions.
This thesis presents an in-depth theoretical analysis of charge and spin transport properties in complex forms of disordered graphene. It relies on innovative real space computational methods of the time-dependent spreading of electronic wave packets. First a universal scaling law of the elastic mean free path versus the average grain size is predicted for polycrystalline morphologies, and charge mobilities of up to 300.000 cm2/V.s are determined for 1 micron grain size, while amorphous graphene membranes are shown to behave as Anderson insulators. An unprecedented spin relaxation mechanism, unique to graphene and driven by spin/pseudospin entanglement is then reported in the presence of weak spin-orbit interaction (gold ad-atom impurities) together with the prediction of a crossover from a quantum spin Hall Effect to spin Hall effect (for thallium ad-atoms), depending on the degree of surface ad-atom segregation and the resulting island diameter.
9783319255712
10.1007/978-3-319-25571-2 doi
Physics. Nanoscale science. Nanoscience. Nanostructures. Optical materials. Electronic materials. Materials--Surfaces. Thin films. Physics. Nanoscale Science and Technology. Optical and Electronic Materials. Surfaces and Interfaces, Thin Films.