Minority carriers in III-V semiconductors :  physics and applications / 
volume editors, Richard K. Ahrenkiel, Mark S. Lundstrom. 
 - Boston :  Academic Press,  ©1993. 
 - 1 online resource (xi, 409 pages) :  illustrations. 
 - Semiconductors and semimetals ;  v. 39 .
 - Semiconductors and semimetals ;  v. 39. .
<br/><br/>Includes bibliographical references and index. 
<br/><br/>Front Cover; Minority Carriers in III-V Semiconductors: Physics and Applications, Volume 39; Copyright Page; Contents; List of Contributors; Preface; Chapter l. Radiative Transitions in GaAs and Other lll-V Compounds; I. Introduction; Il. Band Structure in Semiconductors; lll. Absorption and Emission Rates; IV. Optical Gain; V. InGaAsP Materials; VI. Radiative Lifetime; VII. Quantum-Well Structures; VIII. Application to Lasers; References; Chapter 2. Minority-Carrier Lifetime in III-V Semiconductors; I. Introduction; Il. Recombination Mechanisms; lll. Lifetime Measurement Techniques. IV. Time-Resolved Photoluminescence in Device StructuresV. High-Injection Effects in Double Heterostructures; VI. GaAs Minority-Carrier Lifetime; VII. AIxGa1-xAs Lifetimes; VIII. Summary; Acknowledgments; References; Chapter 3. High Field Minority Electron Transport in p-GaAs; I. Introduction; Il. Drift Velocity; lll. Energy Transfer Process; IV. Ultrafast Energy Relaxation Process; V. Monte Carlo Simulation Results; VI. Summary; Acknowledgment; References; Chapter 4. Minority-Carrier Transport in lll-V Semiconductors; I. Introduction. Il. Minority-Carrier Transport in Compositionally Nonuniform Semiconductorslll. Heavy Doping Effects and Minority-CarrierTransport; IV. Coupled Photon/Minority-Carrier Transport; V. Effects of Heavy Doping on Device-Related Materials Parameters; VI. Minority-Carrier Transport in lll-V Devices; VII. Summary; Acknowledgment; References; Chapter 5. Effects of Heavy Doping and High Excitation on the Band Structure of Gallium Arsenide; I. Introduction; Il. Many-Body Effects in Bulk GaAs; lll. Many-Body Effects in GaAs Quantum Wells; IV. Effects of the Impurity Centres; V. Optical Experiments. VI. Electrical ExperimentsAcknowledgments; References; Chapter 6. An Introduction to Nonequilibrium Many-Body Analyses of Optical and Electronic Processes in III-V Semiconductors; I. Introduction; Il. k . p Band Structure; lll. Second Quantization; IV. Ensemble Properties; V. Electron Self-Energy; VI. Dielectric Function Models; VII. Intraband Processes and Transport; VIII. Interband Processes; IX. Conclusions; APPENDIX A; APPENDIX B; APPENDIX C; References; Index; Contents of Volumes in This Series. 
<br/><br/>Use copy 
<br/><br/> SEMICONDUCTORS & amp; SEMIMETALS V39. 
<br/><br/><br/>Electronic reproduction. <br/>[S.l.] : <br/>HathiTrust Digital Library, <br/>2010. 
<br/><br/><br/>Master and use copy. Digital master created according to Benchmark for Faithful Digital Reproductions of Monographs and Serials, Version 1. Digital Library Federation, December 2002. <br/>http://purl.oclc.org/DLF/benchrepro0212 
<br/><br/><label>ISBN: </label>9780080864365 0080864368 0127521399 9780127521398 
<br/><br/><label>Subjects--Topical Terms: </label><br/>Gallium arsenide semiconductors.<br/>Semiconductors.<br/>Excess carriers (Solid state physics)<br/>SCIENCE--Physics--Electricity.<br/>Excess carriers (Solid state physics)<br/>Gallium arsenide semiconductors.<br/>Semiconductors.<br/>Transporte Eletronico E Propriedades Eletricas De Superficies, Interfaces E Peliculas.<br/>Non-métaux.<br/>Composés semiconducteurs.<br/>Semiconducteurs.
<br/><br/><label>Index Terms--Genre/Form: </label><br/>Electronic books.
<br/><br/><label>LC Class. No.: </label>QC610.9  / .S48eb vol. 39