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Minority carriers in III-V semiconductors : physics and applications / volume editors, Richard K. Ahrenkiel, Mark S. Lundstrom.

Contributor(s): Series: Semiconductors and semimetals ; v. 39.©1993Description: 1 online resource (xi, 409 pages) : illustrationsContent type:
  • text
Media type:
  • computer
Carrier type:
  • online resource
ISBN:
  • 9780080864365
  • 0080864368
  • 0127521399
  • 9780127521398
Subject(s): Genre/Form: Additional physical formats: Print version:: Minority carriers in III-V semiconductors.LOC classification:
  • QC610.9 .S48eb vol. 39
Online resources:
Contents:
Front Cover; Minority Carriers in III-V Semiconductors: Physics and Applications, Volume 39; Copyright Page; Contents; List of Contributors; Preface; Chapter l. Radiative Transitions in GaAs and Other lll-V Compounds; I. Introduction; Il. Band Structure in Semiconductors; lll. Absorption and Emission Rates; IV. Optical Gain; V. InGaAsP Materials; VI. Radiative Lifetime; VII. Quantum-Well Structures; VIII. Application to Lasers; References; Chapter 2. Minority-Carrier Lifetime in III-V Semiconductors; I. Introduction; Il. Recombination Mechanisms; lll. Lifetime Measurement Techniques.
IV. Time-Resolved Photoluminescence in Device StructuresV. High-Injection Effects in Double Heterostructures; VI. GaAs Minority-Carrier Lifetime; VII. AIxGa1-xAs Lifetimes; VIII. Summary; Acknowledgments; References; Chapter 3. High Field Minority Electron Transport in p-GaAs; I. Introduction; Il. Drift Velocity; lll. Energy Transfer Process; IV. Ultrafast Energy Relaxation Process; V. Monte Carlo Simulation Results; VI. Summary; Acknowledgment; References; Chapter 4. Minority-Carrier Transport in lll-V Semiconductors; I. Introduction.
Il. Minority-Carrier Transport in Compositionally Nonuniform Semiconductorslll. Heavy Doping Effects and Minority-CarrierTransport; IV. Coupled Photon/Minority-Carrier Transport; V. Effects of Heavy Doping on Device-Related Materials Parameters; VI. Minority-Carrier Transport in lll-V Devices; VII. Summary; Acknowledgment; References; Chapter 5. Effects of Heavy Doping and High Excitation on the Band Structure of Gallium Arsenide; I. Introduction; Il. Many-Body Effects in Bulk GaAs; lll. Many-Body Effects in GaAs Quantum Wells; IV. Effects of the Impurity Centres; V. Optical Experiments.
VI. Electrical ExperimentsAcknowledgments; References; Chapter 6. An Introduction to Nonequilibrium Many-Body Analyses of Optical and Electronic Processes in III-V Semiconductors; I. Introduction; Il. k . p Band Structure; lll. Second Quantization; IV. Ensemble Properties; V. Electron Self-Energy; VI. Dielectric Function Models; VII. Intraband Processes and Transport; VIII. Interband Processes; IX. Conclusions; APPENDIX A; APPENDIX B; APPENDIX C; References; Index; Contents of Volumes in This Series.
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  • digitized 2010 HathiTrust Digital Library committed to preserve
Summary: SEMICONDUCTORS & amp; SEMIMETALS V39.
Item type: eBooks
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Includes bibliographical references and index.

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Front Cover; Minority Carriers in III-V Semiconductors: Physics and Applications, Volume 39; Copyright Page; Contents; List of Contributors; Preface; Chapter l. Radiative Transitions in GaAs and Other lll-V Compounds; I. Introduction; Il. Band Structure in Semiconductors; lll. Absorption and Emission Rates; IV. Optical Gain; V. InGaAsP Materials; VI. Radiative Lifetime; VII. Quantum-Well Structures; VIII. Application to Lasers; References; Chapter 2. Minority-Carrier Lifetime in III-V Semiconductors; I. Introduction; Il. Recombination Mechanisms; lll. Lifetime Measurement Techniques.

IV. Time-Resolved Photoluminescence in Device StructuresV. High-Injection Effects in Double Heterostructures; VI. GaAs Minority-Carrier Lifetime; VII. AIxGa1-xAs Lifetimes; VIII. Summary; Acknowledgments; References; Chapter 3. High Field Minority Electron Transport in p-GaAs; I. Introduction; Il. Drift Velocity; lll. Energy Transfer Process; IV. Ultrafast Energy Relaxation Process; V. Monte Carlo Simulation Results; VI. Summary; Acknowledgment; References; Chapter 4. Minority-Carrier Transport in lll-V Semiconductors; I. Introduction.

Il. Minority-Carrier Transport in Compositionally Nonuniform Semiconductorslll. Heavy Doping Effects and Minority-CarrierTransport; IV. Coupled Photon/Minority-Carrier Transport; V. Effects of Heavy Doping on Device-Related Materials Parameters; VI. Minority-Carrier Transport in lll-V Devices; VII. Summary; Acknowledgment; References; Chapter 5. Effects of Heavy Doping and High Excitation on the Band Structure of Gallium Arsenide; I. Introduction; Il. Many-Body Effects in Bulk GaAs; lll. Many-Body Effects in GaAs Quantum Wells; IV. Effects of the Impurity Centres; V. Optical Experiments.

VI. Electrical ExperimentsAcknowledgments; References; Chapter 6. An Introduction to Nonequilibrium Many-Body Analyses of Optical and Electronic Processes in III-V Semiconductors; I. Introduction; Il. k . p Band Structure; lll. Second Quantization; IV. Ensemble Properties; V. Electron Self-Energy; VI. Dielectric Function Models; VII. Intraband Processes and Transport; VIII. Interband Processes; IX. Conclusions; APPENDIX A; APPENDIX B; APPENDIX C; References; Index; Contents of Volumes in This Series.

SEMICONDUCTORS & amp; SEMIMETALS V39.

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