Epitaxial microstructures / volume editor Arthur C. Gossard.
Series: Semiconductors and semimetals ; v. 40.©1994Description: 1 online resource (xiv, 426 pages) : illustrationsContent type:- text
- computer
- online resource
- 9780080864372
- 0080864376
- 1283173816
- 9781283173810
- TK7872.S4 W5 v.40
- digitized 2010 HathiTrust Digital Library committed to preserve

Includes bibliographical references and index.
Delta-doping of semiconductors: electronic, optical, and structural properties of materials and devices / E.F. Schubert -- Wide graded potential wells / A. Gossard, M. Sundaram, and P. Hopkins -- Direct growth of nanometer-size quantum wire superlattices / P. Petroff -- Lateral patterning of quantum well heterostructures by growth of nonplanar substrates / E. Kapon -- Optical properties of Ga [subscript 1-x] In [subscript x] As/InP quantum wells / H. Temkin, D. Gershoni, and M. Panish.
Use copy Restrictions unspecified star MiAaHDL
Electronic reproduction. [S.l.] : HathiTrust Digital Library, 2010. MiAaHDL
Master and use copy. Digital master created according to Benchmark for Faithful Digital Reproductions of Monographs and Serials, Version 1. Digital Library Federation, December 2002. MiAaHDL
http://purl.oclc.org/DLF/benchrepro0212
digitized 2010 HathiTrust Digital Library committed to preserve pda MiAaHDL
Print version record.
Newly developed semiconductor microstructures can now guide light and electrons resulting in important consequences for state-of-the-art electronic and photonic devices. This volume introduces a new generation of epitaxial microstructures. Special emphasis has been given to atomic control during growth and the interrelationship between the atomic arrangements and the properties of the structures. Key Features * Atomic-level control of semiconductor microstructures * Molecular beam epitaxy, metal-organic chemical vapor deposition * Quantum wells and quantum wires * Lasers, photon(IR)detectors, heterostructure transistors.
Elsevier ScienceDirect All Books