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Subsecond Annealing of Advanced Materials [electronic resource] : Annealing by Lasers, Flash Lamps and Swift Heavy Ions / edited by Wolfgang Skorupa, Heidemarie Schmidt.

Contributor(s): Series: Springer Series in Materials Science ; 192Publisher: Cham : Springer International Publishing : Imprint: Springer, 2014Description: XVII, 321 p. 205 illus., 59 illus. in color. online resourceContent type:
  • text
Media type:
  • computer
Carrier type:
  • online resource
ISBN:
  • 9783319031316
Subject(s): Genre/Form: Additional physical formats: Printed edition:: No titleDDC classification:
  • 620.11295 23
  • 620.11297 23
LOC classification:
  • TA1750-1750.22
Online resources:
Contents:
From the Contents: The very early time -- Nanonet formation by constitutional supercooling of pulsed laser annealed, Mn-implanted germanium -- Metastable activation of dopants by solid phase epitaxial recrystallization -- Superconducting Ga-implanted Germanium -- Structural changes in SiGe/Si layers induced by fast crystallization.
In: Springer eBooksSummary: The thermal processing of materials ranges from few femtoseconds by Swift Heavy Ion Implantation to about one second using advanced Rapid Thermal Annealing. This book offers after an historical excursus selected contributions on fundamental and applied aspects of thermal processing of classical elemental semiconductors and other advanced materials including nanostructures with novel optoelectronic, magnetic, and superconducting properties. Special emphasis is given on the diffusion and segregation of impurity atoms during thermal treatment. A broad range of examples describes the solid phase and/or liquid phase processing of elemental and compound semiconductors, dielectric composites and organic materials.
Item type: eBooks
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From the Contents: The very early time -- Nanonet formation by constitutional supercooling of pulsed laser annealed, Mn-implanted germanium -- Metastable activation of dopants by solid phase epitaxial recrystallization -- Superconducting Ga-implanted Germanium -- Structural changes in SiGe/Si layers induced by fast crystallization.

The thermal processing of materials ranges from few femtoseconds by Swift Heavy Ion Implantation to about one second using advanced Rapid Thermal Annealing. This book offers after an historical excursus selected contributions on fundamental and applied aspects of thermal processing of classical elemental semiconductors and other advanced materials including nanostructures with novel optoelectronic, magnetic, and superconducting properties. Special emphasis is given on the diffusion and segregation of impurity atoms during thermal treatment. A broad range of examples describes the solid phase and/or liquid phase processing of elemental and compound semiconductors, dielectric composites and organic materials.

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