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Oxygen in silicon / volume editor, Fumio Shimura.

Contributor(s): Series: Semiconductors and semimetals ; v. 42.©1994Description: 1 online resource (xvi, 679 pages) : illustrationsContent type:
  • text
Media type:
  • computer
Carrier type:
  • online resource
ISBN:
  • 9780080864396
  • 0080864392
  • 1281514233
  • 9781281514233
Subject(s): Genre/Form: Additional physical formats: Print version:: Oxygen in silicon.LOC classification:
  • TK7872.S4 W5 v.42
Online resources:
Contents:
Front Cover; Oxygen in Silicon: Semiconductors and Semimetals; Copyright Page; Contents; List of Contributors; Preface; Chapter 1. Introduction to Oxygen in Silicon; Chapter 2. The Incorporation of Oxygen into Silicon Crystals; Chapter 3. Characterization Techniques for Oxygen in Silicon; Chapter 4. Oxygen Concentration Measurement; Chapter 5. Intrinsic Point Defects in Silicon; Chapter 6. Some Atomic Configurations of Oxygen; Chapter 7. Electrical Properties of Oxygen in Silicon; Chapter 8. Diffusion of Oxygen in Silicon.
Action note:
  • digitized 2010 HathiTrust Digital Library committed to preserve
Summary: This volume reviews the latest understanding of the behavior and roles of oxygen in silicon, which will carry the field into the ULSI era from the experimental and theoretical points of view. The fourteen chapters, written by recognized authorities representing industrial and academic institutions, cover thoroughly the oxygen related phenomena from the crystal growth to device fabrication processes, as well as indispensable diagnostic techniques for oxygen. Key Features* Comprehensive study of the behavior of oxygen in silicon* Discusses silicon crystals f.
Item type: eBooks
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Includes bibliographical references and index.

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Print version record.

Front Cover; Oxygen in Silicon: Semiconductors and Semimetals; Copyright Page; Contents; List of Contributors; Preface; Chapter 1. Introduction to Oxygen in Silicon; Chapter 2. The Incorporation of Oxygen into Silicon Crystals; Chapter 3. Characterization Techniques for Oxygen in Silicon; Chapter 4. Oxygen Concentration Measurement; Chapter 5. Intrinsic Point Defects in Silicon; Chapter 6. Some Atomic Configurations of Oxygen; Chapter 7. Electrical Properties of Oxygen in Silicon; Chapter 8. Diffusion of Oxygen in Silicon.

This volume reviews the latest understanding of the behavior and roles of oxygen in silicon, which will carry the field into the ULSI era from the experimental and theoretical points of view. The fourteen chapters, written by recognized authorities representing industrial and academic institutions, cover thoroughly the oxygen related phenomena from the crystal growth to device fabrication processes, as well as indispensable diagnostic techniques for oxygen. Key Features* Comprehensive study of the behavior of oxygen in silicon* Discusses silicon crystals f.

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