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Silicon RF power MOSFETS [electronic resource] / B. Jayant Baliga. by
Publication details: Singapore ; Hackensack, NJ : World Scientific, c2005
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The IGBT device : physics, design and applications of the insulated gate bipolar transistor / B. Jayant Baliga. by Publisher: Kidlington, Oxford, UK ; Waltham, MA : William Andrew, [2015]Copyright date: (copy)2015
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  • Insulated gate bipolar transistor device
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