Plasma deposition of amorphous silicon-based materials / edited by Giovanni Bruno, Pio Capezzuto, Arun Madan.

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text

Media type:

computer

Carrier type:

online resource

ISBN:

9780080539102
0080539106
1281054100
9781281054104

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Genre/Form:

Electronic books.

Additional physical formats: Print version:: Plasma deposition of amorphous silicon-based materials.LOC classification:

TK7871.99.A45 P55 1995eb

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Contents:

Front Cover; Plasma Deposition of Amorphous Silicon-Based Materials; Copyright Page; Contents; Contributors; Preface; Chapter 1. Chemistry of Amorphous Silicon Deposition Processes: Fundamentals and Controversial Aspects; Chapter 2. Diagnostics of Amorphous Silicon (a-Si) Plasma Processes; Chapter 3. Deposition Conditions and the Optoelectronic Properties of a-Si:H Alloys; Chapter 4. Reactor Design for a-Si:H Deposition; Chapter 5. Optoelectronic Properties of Amorphous Silicon Using the Plasma- Enhanced Chemical Vapor Deposition (PECVD) Technique; Chapter 6. Amorphous-Silicon-Based Devices.

Summary: Semiconductors made from amorphous silicon have recently become important for their commercial applications in optical and electronic devices including FAX machines, solar cells, and liquid crystal displays. Plasma Deposition of Amorphous Silicon-Based Materials is a timely, comprehensive reference book written by leading authorities in the field. This volume links the fundamental growth kinetics involving complex plasma chemistry with the resulting semiconductor film properties and the subsequent effect on the performance of the electronic devices produced.

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eBooks

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Includes bibliographical references and index.

Print version record.

Semiconductors made from amorphous silicon have recently become important for their commercial applications in optical and electronic devices including FAX machines, solar cells, and liquid crystal displays. Plasma Deposition of Amorphous Silicon-Based Materials is a timely, comprehensive reference book written by leading authorities in the field. This volume links the fundamental growth kinetics involving complex plasma chemistry with the resulting semiconductor film properties and the subsequent effect on the performance of the electronic devices produced.

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