Includes bibliographical references and index.

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Hydrogen plays an important role in silicon technology, having a profound effect on a wide range of properties. Thus, the study of hydrogen in semiconductors has received much attention from an interdisciplinary assortment of researchers. This sixteen-chapter volume provides a comprehensive review of the field, including a discussion of hydrogenation methods, the use of hydrogen to passivate defects, the use of hydrogen to neutralize deep levels, shallow acceptors and shallow donors in silicon, vibrational spectroscopy, and hydrogen-induced defects in silicon. In addition to this detailed coverage of hydrogen in silicon, chapters are provided that discuss hydrogen-related phenomena in germanium and the neutralization of defects and dopants in III*b1V semiconductors. Provides the most in-depth coverage of hydrogen in silicon available in a single source**Includes an extensive chapter on the neutralization of defects in III*b1V semiconductors**Combines both experimental and theoretical studies to form a comprehensive reference.

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Front Cover; Hydrogen in Semiconductors; Copyright Page; Contents; List of Contributors; Preface; Chapter 1. Introduction to Hydrogen in Semiconductors; References; Chapter 2. Hydrogenation Methods; I. Introduction; II. Plasma and Directed Ion Beam Hydrogenation Methods; III. Electrochemical Techniques; VI. Other Observations of Hydrogenation; References; Chapter 3. Hydrogenation of Defects in Crystalline Silicon; I. Introduction; II. Hydrogenation Technique; III. Passivation of Surface States; IV. Passivation of Grain Boundaries; V. Passivation of Dislocations.

VI. Passivation of Implantation-Induced DefectsVII. Conclusion; References; Chapter 4. Hydrogen Passivation of Damage Centers in Semiconductors; I. Introduction; II. Brief Survey of Defects; III. Electrical Studies; IV. Infrared Studies; V. Summary; Acknowledgments; References; Chapter 5. Neutralization of Deep Levels in Silicon; I. Role and Nature of Deep Levels in Si; II. Types of Defects and Impurities Passivated; III. Thermal Stability of Passivation; IV. Prehydrogenation; V. Models for Deep Level Passivation; References; Chapter 6. Neutralization of Shallow Acceptors in Silicon.

I. IntroductionII. Resistivity Changes Induced by Hydrogenation; III. Capacitance Changes Induced by Hydrogenation; IV. Models of Neutralized Boron in Silicon; V. Changes in IR Absorption Induced by Hydrogenation; VI. Effect of Hydrogenation on the Luminescence of Excitons Bound; VII. Applications of Hydrogen-Mediated Compensation in Silicon; VIII. Conclusion; References; Chapter 7. Neutralization of Donor Dopants and Formation of Hydrogen-Induced Defects in n-Type Silicon; I. Introduction; II. Neutralization of Shallow-Donor Impurities; III. Hydrogen-Induced Defects; IV. Future Directions.

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