000 | 05947cam a2200625Ia 4500 | ||
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001 | ocn289424632 | ||
003 | OCoLC | ||
005 | 20180529114255.0 | ||
008 | 081222s1999 caua ob 001 0 eng d | ||
019 |
_a646756700 _a808732822 _a931604590 |
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020 |
_a9780080864549 _q(electronic bk.) |
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020 |
_a0080864546 _q(electronic bk.) |
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020 |
_a012752164X _q(electronic bk.) |
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020 |
_a9780127521640 _q(electronic bk.) |
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035 | _a(OCoLC)289424632 | ||
040 |
_aDLC _beng _cDLC _dAU |
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049 | _aAlfaisal Main Library | ||
050 | 4 |
_aQC610.9 _b.S48eb vol. 56 |
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245 | 0 | 0 |
_aGermanium silicon : _bphysics and materials / _cvolume editors, Robert Hull, John C. Bean. |
260 |
_aSan Diego : _bAcademic Press, _c©1999. |
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300 |
_a1 online resource (xi, 444 pages) : _billustrations. |
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336 |
_atext _btxt _2rdacontent |
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337 |
_acomputer _bc _2rdamedia |
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338 |
_aonline resource _bcr _2rdacarrier |
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490 | 1 |
_aSemiconductors and semimetals ; _vv. 56 |
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504 | _aIncludes bibliographical references and index. | ||
588 | 0 | _aPrint version record. | |
520 | _aSince its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry. | ||
505 | 0 | _aFront Cover; Germanium Silicon: Physics and Materials; Copyright Page; Contents; List of Contributors; Chapter 1. Growth Techniques and Procedures; I. Introduction; II. Generic lssues; III. Common Growth Techniques; IV. Comparison of Growth Results; V. Nonplanar Growth; VI. Summary; Chapter 2. Fundamental Mechanisms of Film Growth; I. Introduction; II. Silicon; III. Heteroepitaxial Growth: Ge on Si; IV. SiGe Alloy Films; V. Summary; References; Chapter 3. Misfit Strain and Accommodation in SiGe Heterostructures; I. Origin of Strain in Heteroepitaxy; II. Accommodation of Strain. | |
505 | 8 | _aIII. Review of Basic Dislocation TheoryIV. Excess Stress, Equilibrium Strain and Critical Thickness; V. Metastability and Misfit Dislocation Kinetics; VI. Misfit and Threading Dislocation Reduction Techniques; VII. Conclusions; References; Chapter 4. Fundamental Physics of Strained Layer GeSi: Quo Vadis?; I. Introduction; II. Perfect Superlattice Systems; III. Electronic Structure of Imperfect and Finite Systems; IV. Luminescence and Interface Localization; V. Microscopic Signature of GeSi Interfaces; VI. Microscopic Electronic Structure Effects in Optical Spectra; VII. Conclusion; References. | |
505 | 8 | _aChapter 5. Optical PropertiesI. Introduction; II. Forms of Differential Spectroscopy Based on Reflection or Absorption of Light; III. Raman Scattering; IV. Photoluminescence; V. Concluding Remarks; References; Chapter 6. Electronic Properties and Deep Levels in Germanium-Silicon; I. Introduction; II. Deep Levels in GexSi1-x; III. Influence of Defects on Electrical Properties of GexSi1-x, Alloys; IV. Camer Transport Properties of GexSi1-x; V. Conclusions; References; Chapter 7. Optoelectronics in Silicon and Germanium Silicon; I. Introduction; II. Photodetectors; III. Light Emitters. | |
505 | 8 | _aIV. Guided-Wave DevicesV. Conclusions; References; Chapter 8. Si1-y, Cy, and Si1-x-yGexCy Alloy Layers; I. Introduction; II. General Remarks on the Material Combination of Si, Ge and C; III. Preparation of Si1-yCy and Si1-x-yGexCy Layers by Molecular Beam Epitaxy; IV. Structural Properties; V. Optical Properties; VI. Electrical Transport Properties; VII. Summary/Devices; References; Index; Contents of Volumes in This Series. | |
506 |
_aOwing to Legal Deposit regulations this resource may only be accessed from within National Library of Scotland. For more information contact enquiries@nls.uk. _5StEdNL |
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590 |
_aElsevier _bScienceDirect All Books |
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650 | 0 | _aSemiconductors. | |
650 | 0 | _aSilicon. | |
650 | 0 | _aGermanium. | |
650 | 7 |
_aTECHNOLOGY & ENGINEERING _xElectronics _xSolid State. _2bisacsh |
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650 | 7 |
_aTECHNOLOGY & ENGINEERING _xElectronics _xSemiconductors. _2bisacsh |
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650 | 7 |
_aGermanium. _2fast _0(OCoLC)fst00942078 |
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650 | 7 |
_aSemiconductors. _2fast _0(OCoLC)fst01112198 |
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650 | 7 |
_aSilicon. _2fast _0(OCoLC)fst01118631 |
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650 | 7 |
_aSemiconducteurs. _2ram |
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650 | 7 |
_aSemi-métaux. _2ram |
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650 | 7 |
_aSilicium. _2ram |
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650 | 7 |
_aGermanium. _2ram |
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655 | 7 |
_aElectronic books. _2local |
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700 | 1 |
_aHull, Robert, _d1959- |
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700 | 1 |
_aBean, John C. _q(John Condon), _d1950- |
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710 | 2 | _aScienceDirect eBooks. | |
776 | 0 | 8 |
_iPrint version: _tGermanium silicon. _dSan Diego : Academic Press, ©1999 _z012752164X _z9780127521640 _w(OCoLC)40391761 |
830 | 0 |
_aSemiconductors and semimetals ; _vv. 56. |
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856 | 4 | 0 | _uhttp://ezproxy.alfaisal.edu/login?url=https://www.sciencedirect.com/science/bookseries/00808784/56 |
942 |
_2lcc _cEBOOKS |
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264 | _c©1999. | ||
999 |
_c526899 _d526899 |