000 05947cam a2200625Ia 4500
001 ocn289424632
003 OCoLC
005 20180529114255.0
008 081222s1999 caua ob 001 0 eng d
019 _a646756700
_a808732822
_a931604590
020 _a9780080864549
_q(electronic bk.)
020 _a0080864546
_q(electronic bk.)
020 _a012752164X
_q(electronic bk.)
020 _a9780127521640
_q(electronic bk.)
035 _a(OCoLC)289424632
040 _aDLC
_beng
_cDLC
_dAU
049 _aAlfaisal Main Library
050 4 _aQC610.9
_b.S48eb vol. 56
245 0 0 _aGermanium silicon :
_bphysics and materials /
_cvolume editors, Robert Hull, John C. Bean.
260 _aSan Diego :
_bAcademic Press,
_c©1999.
300 _a1 online resource (xi, 444 pages) :
_billustrations.
336 _atext
_btxt
_2rdacontent
337 _acomputer
_bc
_2rdamedia
338 _aonline resource
_bcr
_2rdacarrier
490 1 _aSemiconductors and semimetals ;
_vv. 56
504 _aIncludes bibliographical references and index.
588 0 _aPrint version record.
520 _aSince its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.
505 0 _aFront Cover; Germanium Silicon: Physics and Materials; Copyright Page; Contents; List of Contributors; Chapter 1. Growth Techniques and Procedures; I. Introduction; II. Generic lssues; III. Common Growth Techniques; IV. Comparison of Growth Results; V. Nonplanar Growth; VI. Summary; Chapter 2. Fundamental Mechanisms of Film Growth; I. Introduction; II. Silicon; III. Heteroepitaxial Growth: Ge on Si; IV. SiGe Alloy Films; V. Summary; References; Chapter 3. Misfit Strain and Accommodation in SiGe Heterostructures; I. Origin of Strain in Heteroepitaxy; II. Accommodation of Strain.
505 8 _aIII. Review of Basic Dislocation TheoryIV. Excess Stress, Equilibrium Strain and Critical Thickness; V. Metastability and Misfit Dislocation Kinetics; VI. Misfit and Threading Dislocation Reduction Techniques; VII. Conclusions; References; Chapter 4. Fundamental Physics of Strained Layer GeSi: Quo Vadis?; I. Introduction; II. Perfect Superlattice Systems; III. Electronic Structure of Imperfect and Finite Systems; IV. Luminescence and Interface Localization; V. Microscopic Signature of GeSi Interfaces; VI. Microscopic Electronic Structure Effects in Optical Spectra; VII. Conclusion; References.
505 8 _aChapter 5. Optical PropertiesI. Introduction; II. Forms of Differential Spectroscopy Based on Reflection or Absorption of Light; III. Raman Scattering; IV. Photoluminescence; V. Concluding Remarks; References; Chapter 6. Electronic Properties and Deep Levels in Germanium-Silicon; I. Introduction; II. Deep Levels in GexSi1-x; III. Influence of Defects on Electrical Properties of GexSi1-x, Alloys; IV. Camer Transport Properties of GexSi1-x; V. Conclusions; References; Chapter 7. Optoelectronics in Silicon and Germanium Silicon; I. Introduction; II. Photodetectors; III. Light Emitters.
505 8 _aIV. Guided-Wave DevicesV. Conclusions; References; Chapter 8. Si1-y, Cy, and Si1-x-yGexCy Alloy Layers; I. Introduction; II. General Remarks on the Material Combination of Si, Ge and C; III. Preparation of Si1-yCy and Si1-x-yGexCy Layers by Molecular Beam Epitaxy; IV. Structural Properties; V. Optical Properties; VI. Electrical Transport Properties; VII. Summary/Devices; References; Index; Contents of Volumes in This Series.
506 _aOwing to Legal Deposit regulations this resource may only be accessed from within National Library of Scotland. For more information contact enquiries@nls.uk.
_5StEdNL
590 _aElsevier
_bScienceDirect All Books
650 0 _aSemiconductors.
650 0 _aSilicon.
650 0 _aGermanium.
650 7 _aTECHNOLOGY & ENGINEERING
_xElectronics
_xSolid State.
_2bisacsh
650 7 _aTECHNOLOGY & ENGINEERING
_xElectronics
_xSemiconductors.
_2bisacsh
650 7 _aGermanium.
_2fast
_0(OCoLC)fst00942078
650 7 _aSemiconductors.
_2fast
_0(OCoLC)fst01112198
650 7 _aSilicon.
_2fast
_0(OCoLC)fst01118631
650 7 _aSemiconducteurs.
_2ram
650 7 _aSemi-métaux.
_2ram
650 7 _aSilicium.
_2ram
650 7 _aGermanium.
_2ram
655 7 _aElectronic books.
_2local
700 1 _aHull, Robert,
_d1959-
700 1 _aBean, John C.
_q(John Condon),
_d1950-
710 2 _aScienceDirect eBooks.
776 0 8 _iPrint version:
_tGermanium silicon.
_dSan Diego : Academic Press, ©1999
_z012752164X
_z9780127521640
_w(OCoLC)40391761
830 0 _aSemiconductors and semimetals ;
_vv. 56.
856 4 0 _uhttp://ezproxy.alfaisal.edu/login?url=https://www.sciencedirect.com/science/bookseries/00808784/56
942 _2lcc
_cEBOOKS
264 _c©1999.
999 _c526899
_d526899