000			06258cam a2200541Ia 4500
001			ocn289496200
003			OCoLC
005			20180529114255.0
008			081222s1999 caua ob 001 0 eng d
019			_a646757097 _a808732823 _a906429742
020			_a9780080864556 _q(electronic bk.)
020			_a0080864554 _q(electronic bk.)
020			_a0127521666 _q(electronic bk.)
020			_a9780127521664 _q(electronic bk.)
035			_a(OCoLC)289496200
040			_aDLC _beng _cDLC _dAU
049			_aAlfaisal Main Library
050		4	_aQC610.9 _b.S48eb vol. 57
245	0	0	_aGallium nitride (GaN). _nII / _cvolume editors, Jacques I. Pankove, Theodore D. Moustakas.
260			_aSan Diego ; _aLondon : _bAcademic, _c©1999.
300			_a1 online resource (xvi, 489 pages) : _billustrations.
336			_atext _btxt _2rdacontent
337			_acomputer _bc _2rdamedia
338			_aonline resource _bcr _2rdacarrier
490	0		_aSemiconductors and semimetals ; _vv. 57
504			_aIncludes bibliographical references and index.
588	0		_aPrint version record.
520			_aSince its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.
505	0		_aFront Cover; Gallium Nitride (GaN) II; Copyright Page; Contents; Preface; List of Contributors; CHAPTER 1. Hydride Vapor Phase Epitaxial Growth of III-V Nitrides; List of Acronyms and Abbreviations; I. Introduction; II. Nitride HVPE Growth; III. GaN Film Characterization; IV. Light-Emitting Diodes; V. HVPE for Nitride Substrates; VI. Conclusions; References; CHAPTER 2. Growth of III-V Nitrides by Molecular Beam Epitaxy; I . Introduction; II. Background of Molecular Beam Epitaxy Techniques; III. Nitrogen Sources Used for the Growth of III-V Nitrides by Molecular Beam Epitaxy; IV. GaN Films.
505	8		_aV. InGaAlN AlloysVI. Multiquantum Wells; VII. Device Applications; VIII. Conclusions; References; CHAPTER 3. Defects in Bulk GaN and Homoepitaxial Layers; I. Introduction; II. Polarity of the Crystals; III. Defect Distribution; IV. Nanotubes; V. PL and Point Defects; VI. Influence of Annealing; VII. Larger-Dimension Bulk GaN Crystals; VIII. Homoepitaxial Layers; IX. Summary; References; CHAPTER 4. Hydrogen in III-V Nitrides; I. Introduction; II. Theoretical Framework; III. Experimental Observations; IV. Conclusions and Outlook; References.
505	8		_aCHAPTER 5. Characterization of Dopants and Deep Level Defects in Gallium NitrideI. Introduction; II. Materials Preparation; III. Shallow Dopants; IV. Deep Level Defects; V. Conclusions; References; CHAPTER 6. Stress Effects on Optical Properties; I. Introduction; II. The Crystalline Structures of III-Nitrides; III. Effects of Strain Fields on the Electronic Structure of Wurtzite III Nitrides; IV. Exciton Oscillator Strengths and Longitudinal-Transverse Splittings; V. Origin of the Strain; VI. Phonons Under Strain Fields; VII. Shallow vs Deep-Level Behavior Under Hydrostatic Pressure.
505	8		_aVIII. Influence of Strain Fields on Optical Properties of GaN-AlGaN Quantum WellsIX. Self-Organized Quantum Boxes; X. Conclusion; References; CHAPTER 7. Strain in GaN Thin Films and Heterostructures; I. Thin-Film Growth at Low Temperatures; II. Stress/Strain Relations; III. Control of Hydrostatic and Biaxial Stress and Strain Components; IV. Strained AlN/InN/GaN Heterostructures; V. Perspectives; References; CHAPTER 8. Nonlinear Optical Properties of Gallium Nitride; I. Introduction; II. Background; III. Second-Order Nonlinear Optical Phenomena; IV. Third-Order Nonlinear Optical Phenomena.
505	8		_aV. Potential DevicesVI. Conclusions; References; CHAPTER 9. Magnetic Resonance Investigations on Group III-Nitrides; I. Introduction; II. Magnetic Resonance-The Basis of Identification; III. Shallow Donors in Cubic and Hexagonal GaN (EPR Results); IV. Shallow and Deep Donors in GaN (ODMR Results); V. Shallow and Deep Acceptors in GaN; VI. Defects Induced by Particle Irradiation in GaN and AIN; VII. Device-Related Magnetic Resonance Studies; VIII. Transition Metal Impurities; IX. Outlook; References; Chapter 10. GaN and AIGaN Utraviolet Detectors; I. Introduction; II. Principle of Operation.
590			_aElsevier _bScienceDirect All Books
650		0	_aSemiconductors.
650		0	_aGallium nitride.
650		7	_aTECHNOLOGY & ENGINEERING _xElectronics _xSolid State. _2bisacsh
650		7	_aTECHNOLOGY & ENGINEERING _xElectronics _xSemiconductors. _2bisacsh
650		7	_aGallium nitride. _2fast _0(OCoLC)fst00937295
650		7	_aSemiconductors. _2fast _0(OCoLC)fst01112198
655		7	_aElectronic books. _2local
700	1		_aMoustakas, T. D.
700	1		_aPankove, Jacques I., _d1922-
710	2		_aScienceDirect eBooks.
776	0	8	_iPrint version: _tGallium nitride (GaN). II. _dSan Diego ; London : Academic, ©1999 _z012544057X _z9780125440578 _w(OCoLC)46433925
856	4	0	_uhttp://ezproxy.alfaisal.edu/login?url=https://www.sciencedirect.com/science/bookseries/00808784/57
942			_2lcc _cEBOOKS
264			_c©1999.
999			_c526900 _d526900